High density plasma etcher
SKU：PREE-BIR2010 / BI2R2010
- High density plasma source (ICP) achieves high etching rate.
- The Loadlock design effectively stabilizes the process environment and prevents personnel from coming into contact with harmful gases.
- 8 inch carrier provides flexible placement of small size test pieces.
- Special carrier design can reduce particle pollution.
- Requirements for passivation, oxide, nitride, silicon carbide, silicon etching, and carbon cleaning processes can be met.
- High density plasma with high efficiency vacuum system design (Loadlock) to gain higher throughput.
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